Development of Contact Materials for Semiconductor Devices. Heavy Doping in III-V Compound Semiconductors.
نویسندگان
چکیده
منابع مشابه
Progress in Antimonide Based III-V Compound Semiconductors and Devices
In recent years, the narrow bandgap antimonide based compound semiconductors (ABCS) are widely regarded as the first candidate materials for fabrication of the third generation infrared photon detectors and integrated circuits with ultra-high speed and ultra-low power consumption. Due to their unique bandgap structure and physical properties, it makes a vast space to develop various novel devic...
متن کاملDensity-functional calculations of carbon doping in III-V compound semiconductors
This article reports the results of investigations based on local-density-functional theory into the relative formation energies for single substitutional carbon atoms in nine III-V compound semiconductors. The calculations are performed using a supercell formalism derived from the AIMPRO real-space cluster method. Only a very slight trend is discernible down the periodic table. When a metal at...
متن کاملCharacterization of Novel III-V Semiconductor Devices
This thesis presents the characterization of tunnel junctions and tunnel-junction-coupled lasers. The reverse-biased leakage current in a tunnel junction can be exploited to tunnel electrons from the valence band of one active region to the conduction band of a second active region. Thus, tunnel-junction-coupled lasers are highly efficient as they allow electrons to stimulate the emission of ph...
متن کاملSelf-aligned via and trench for metal contact in III-V semiconductor devices
A semiconductor processing method for the formation of self-aligned via and trench structures in III-V semiconductor devices in particular, on InP platform is presented, together with fabrication results. As a template for such self-aligned via and trench formations in a surrounding polymer layer on a semiconductor device, we make use of a sacrificial layer that consists of either a SiO2 dielec...
متن کاملTowards controlled Doping in III-V Semiconductor Nanowires
Nanowires are quasi-one-dimensional single crystals with lateral dimensions that can be scaled-down to only a few nanometers. They can simultaneously act as active components and interconnects and therefore fulfill the two basic functions of any active device. However, controlled doping of III-V nanowires is challenging due to strong Fermi-level pinning as well as the kinetic and thermodynamic ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Materia Japan
سال: 1994
ISSN: 1340-2625,1884-5843
DOI: 10.2320/materia.33.709